Ultraviolet LEDs and their applications are an important development direction of the third-generation semiconductor industry. In order to speed up major scientific and technological research and the transformation of achievements, in 2020, the Institute of Semiconductors of the Chinese Academy of Sciences undertook the research and development task of the "Gallium Nitride-based High-Efficiency Deep Ultraviolet LED Chip Technology" project.
As a new generation of ultraviolet light source, the nitride deep ultraviolet LED has attracted great attention from researchers and industry from all over the world, and breakthroughs have been made in technological innovation and application innovation. By strengthening basic theoretical research and introducing new technologies, the project unit focuses on the key to high-quality AlN template materials, large mismatch heteroepitaxial defects and stress control of AlGaN materials, high-efficiency quantum structure design and epitaxy, and high-efficiency deep ultraviolet LED chips Research work on preparation technology and advanced packaging technology has significantly improved the internal quantum efficiency and light extraction efficiency of deep-ultraviolet LED chips. The high-power deep-ultraviolet LED chips prepared have a luminous power exceeding 40mW, and a deep-ultraviolet luminous power exceeding 1W has been developed. LED module, the module life is more than 5000 hours.
At present, relevant high-power products have been produced in small batches. After the scale of industrialization is enlarged, it can effectively reduce chip costs and product prices, promote the deep ultraviolet LED industry to open up new application fields and markets, and effectively promote the development of upstream and downstream related industries, and economic and social benefits Will be very significant.
